Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance, large-area uniformity, and low processing temperature. This article reviews the recent progress and major trends in the field of IGZO-based TFTs. After a brief introduction of the history of IGZO and the main advantages of IGZO-based TFTs, an overview of IGZO materials and IGZO-based TFTs is given. In this part, IGZO material electron travelling orbitals and deposition methods are introduced, and the specific device structures and electrical performance are also presented. Afterwards, the recent advances of IGZO-based TFT applications are summarized, including flat panel display drivers, novel sensors, and emerging neuromorphic systems. In particular, the realization of flexible electronic systems is discussed. The last part of this review consists of the conclusions and gives an outlook over the field with a prediction for the future.
ISSN: 2058-6140
Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
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Ying Zhu et al 2021 J. Semicond. 42 031101
Yanbin Huang et al 2020 J. Semicond. 41 011701
Solar water splitting is a promising strategy for sustainable production of renewable hydrogen, and solving the crisis of energy and environment in the world. However, large-scale application of this method is hampered by the efficiency and the expense of the solar water splitting systems. Searching for non-toxic, low-cost, efficient and stable photocatalysts is an important way for solar water splitting. Due to the simplicity of structure and the flexibility of composition, perovskite based photocatalysts have recently attracted widespread attention for application in solar water splitting. In this review, the recent developments of perovskite based photocatalysts for water splitting are summarized. An introduction including the structures and properties of perovskite materials, and the fundamentals of solar water splitting is first provided. Then, it specifically focuses on the strategies for designing and modulating perovskite materials to improve their photocatalytic performance for solar water splitting. The current challenges and perspectives of perovskite materials in solar water splitting are also reviewed. The aim of this review is to summarize recent findings and developments of perovskite based photocatalysts and provide some useful guidance for the future research on the design and development of highly efficient perovskite based photocatalysts and the relevant systems for water splitting.
Kai Dong and Zhong Lin Wang 2021 J. Semicond. 42 101601
Lightweight and flexible self-charging power systems with synchronous energy harvesting and energy storage abilities are highly desired in the era of the internet of things and artificial intelligences, which can provide stable, sustainable, and autonomous power sources for ubiquitous, distributed, and low-power wearable electronics. However, there is a lack of comprehensive review and challenging discussion on the state-of-the-art of the triboelectric nanogenetor (TENG)-based self-charging power textiles, which have a great possibility to become the future energy autonomy power sources. Herein, the recent progress of the self-charging power textiles hybridizing fiber/fabric based TENGs and fiber/fabric shaped batteries/supercapacitors is comprehensively summarized from the aspect of textile structural designs. Based on the current research status, the key bottlenecks and brighter prospects of self-charging power textiles are also discussed in the end. It is hoped that the summary and prospect of the latest research of self-charging power textiles can help relevant researchers accurately grasp the research progress, focus on the key scientific and technological issues, and promote further research and practical application process.
Jianqiang Qin et al 2021 J. Semicond. 42 010501
Mo Huang et al 2020 J. Semicond. 41 111405
Granular power management in a power-efficient system on a chip (SoC) requires multiple integrated voltage regulators with a small area, process scalability, and low supply voltage. Conventional on-chip analog low-dropout regulators (ALDOs) can hardly meet these requirements, while digital LDOs (DLDOs) are good alternatives. However, the conventional DLDO, with synchronous control, has inherently slow transient response limited by the power-speed trade-off. Meanwhile, it has a poor power supply rejection (PSR), because the fully turned-on power switches in DLDO are vulnerable to power supply ripples. In this comparative study on DLDOs, first, we compare the pros and cons between ALDO and DLDO in general. Then, we summarize the recent DLDO advanced techniques for fast transient response and PSR enhancement. Finally, we discuss the design trends and possible directions of DLDO.
Xing Lu et al 2023 J. Semicond. 44 061802
Beta gallium oxide (β-Ga2O3) has attracted significant attention for applications in power electronics due to its ultra-wide bandgap of ~ 4.8 eV and the large critical electric field of 8 MV/cm. These properties yield a high Baliga's figures of merit (BFOM) of more than 3000. Though β-Ga2O3 possesses superior material properties, the lack of p-type doping is the main obstacle that hinders the development of β-Ga2O3-based power devices for commercial use. Constructing heterojunctions by employing other p-type materials has been proven to be a feasible solution to this issue. Nickel oxide (NiO) is the most promising candidate due to its wide band gap of 3.6–4.0 eV. So far, remarkable progress has been made in NiO/β-Ga2O3 heterojunction power devices. This review aims to summarize recent advances in the construction, characterization, and device performance of the NiO/β-Ga2O3 heterojunction power devices. The crystallinity, band structure, and carrier transport property of the sputtered NiO/β-Ga2O3 heterojunctions are discussed. Various device architectures, including the NiO/β-Ga2O3 heterojunction pn diodes (HJDs), junction barrier Schottky (JBS) diodes, and junction field effect transistors (JFET), as well as the edge terminations and super-junctions based on the NiO/β-Ga2O3 heterojunction, are described.
Ke Jin et al 2021 J. Semicond. 42 060502
Andrey S. Sokolov et al 2021 J. Semicond. 42 013101
Resistive random-access memory (RRAM), also known as memristors, having a very simple device structure with two terminals, fulfill almost all of the fundamental requirements of volatile memory, nonvolatile memory, and neuromorphic characteristics. Its memory and neuromorphic behaviors are currently being explored in relation to a range of materials, such as biological materials, perovskites, 2D materials, and transition metal oxides. In this review, we discuss the different electrical behaviors exhibited by RRAM devices based on these materials by briefly explaining their corresponding switching mechanisms. We then discuss emergent memory technologies using memristors, together with its potential neuromorphic applications, by elucidating the different material engineering techniques used during device fabrication to improve the memory and neuromorphic performance of devices, in areas such as ION/IOFF ratio, endurance, spike time-dependent plasticity (STDP), and paired-pulse facilitation (PPF), among others. The emulation of essential biological synaptic functions realized in various switching materials, including inorganic metal oxides and new organic materials, as well as diverse device structures such as single-layer and multilayer hetero-structured devices, and crossbar arrays, is analyzed in detail. Finally, we discuss current challenges and future prospects for the development of inorganic and new materials-based memristors.
Shuliang Ren et al 2019 J. Semicond. 40 071903
The solid state single photon source is fundamental key device for application of quantum communication, quantum computing, quantum information and quantum precious metrology. After years of searching, researchers have found the single photon emitters in zero-dimensional quantum dots (QDs), one-dimensional nanowires, three-dimensional wide bandgap materials, as well as two-dimensional (2D) materials developed recently. Here we will give a brief review on the single photon emitters in 2D van der Waals materials. We will firstly introduce the quantum emitters from various 2D materials and their characteristics. Then we will introduce the electrically driven quantum light in the transition metal dichalcogenides (TMDs)-based light emitting diode (LED). In addition, we will introduce how to tailor the quantum emitters by nanopillars and strain engineering, the entanglement between chiral phonons (CPs) and single photon in monolayer TMDs. Finally, we will give a perspective on the opportunities and challenges of 2D materials-based quantum light sources.
Fuyou Liao et al 2021 J. Semicond. 42 013105
Conventional frame-based image sensors suffer greatly from high energy consumption and latency. Mimicking neurobiological structures and functionalities of the retina provides a promising way to build a neuromorphic vision sensor with highly efficient image processing. In this review article, we will start with a brief introduction to explain the working mechanism and the challenges of conventional frame-based image sensors, and introduce the structure and functions of biological retina. In the main section, we will overview recent developments in neuromorphic vision sensors, including the silicon retina based on conventional Si CMOS digital technologies, and the neuromorphic vision sensors with the implementation of emerging devices. Finally, we will provide a brief outline of the prospects and outlook for the development of this field.
Cheng Huang and Junyao Tang 2024 J. Semicond. 45 040202
Mo Huang et al 2024 J. Semicond. 45 040203
Bohan Yang et al 2024 J. Semicond. 45 040204
Yun Wang and Hongtao Xu 2024 J. Semicond. 45 040205
Cheng Huang and Junyao Tang 2024 J. Semicond. 45 040202
Mo Huang et al 2024 J. Semicond. 45 040203
Bohan Yang et al 2024 J. Semicond. 45 040204
Yun Wang and Hongtao Xu 2024 J. Semicond. 45 040205